IPF090N03L G datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  IPF090N03L G
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPF090N03L G Configuration: Single Continuous Drain Current: 40 A Drain-source Breakdown Voltage: 30 V Fall Time: 3 ns Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: TO-252 Power Dissipation: 42 W Product Category: MOSFET Resistance Drain-source Rds (on): 13.5 mOhms Rise Time: 14 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 15 ns RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 13.5 mOhms Typical Turn-Off Delay Time: 15 ns
• Количество страниц
  1 шт.
• Формат
  PDF

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• Размер файла
  5,03 KB

IPF090N03L G datasheet скачать

IPF090N03L G datasheet